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PD - 96262
IRF8721GPbF
Applications
HEXFET ? Power MOSFET
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
V DSS
R DS(on) max
Qg
Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
30V 8.5m @V GS = 10V 8.3nC
A
Benefits
l Very Low Gate Charge
S
1
8
A
D
l
l
l
l
Low R DS(on) at 4.5V V GS
Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V GS Max. Gate Rating
S
S
G
2
3
4
Top View
7
6
5
D
D
D
SO-8
l
l
Lead-Free
Halogen-Free
Description
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JL
R θ JA
Junction-to-Drain Lead
Junction-to-Ambient
–––
–––
20
50
°C/W
Notes ? through ? are on page 9
www.irf.com
1
07/10/09
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